Transistor with recess gate and forming method thereof,申请号KR20040044295-传众专利搜索

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发明名称	Transistor with recess gate and forming method thereof
摘要
申请公布号	KR100598170(B1)	申请公布日期	2006.07.10
申请号	KR20040044295	申请日期	2004.06.16
申请人		发明人
分类号	H01L21/335;H01L21/336	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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