| 摘要 |
<p>A thin film layer, a heating electrode, a phase change memory including the thin film layer, and methods for forming the same. The method of forming the thin film layer by atomic layer deposition (ALD) may include injecting a titanium (Ti) source, a nitrogen (N) source, and/or an aluminum (Al) source onto a substrate at different flow rates and for different periods of time. The heating electrode may include a Ti1-xAlxN layer, wherein x is about 0.4<x<0.5 at a first portion of the heating electrode contacting a phase change layer and 0<x<0.1 at other portions of the heating electrode. The phase change memory may include the heating electrode including the Ti1-xAlxN layer, an insulating layer formed on the heating electrode and having a contact hole exposing the heating electrode and the phase change layer contacting the first portion of the heating electrode.</p> |
