| 摘要 |
The invention relates to a memory element comprised of an electrode ( 2 ), of a ferroelectric layer ( 3 ), which is adjacent thereto, of a layer ( 4 ), which is made of a non-ferroelectric material and which is adjacent to said ferroelectric layer ( 3 ), and of an electrode ( 5 ), which is made of a non-ferroelectric material and which is adjacent to layer ( 4 ). The electric resistance of the ferroelectric layer and of the non-ferroelectric layer are preferably low. The invention also relates to a method for electronically storing information by writing an item of information into a memory element of the aforementioned type by aligning a polarization in a polarizable layer, and the information is read by determining the polarizing direction by measuring resistance. This renders a particularly fast remanent storage of electronic data possible.
|
