| 摘要 |
A method for manufacturing a semiconductor device in accordance with an embodiment of the present invention provides performing a CMP process using high selectivity slurry until the hard mask nitride film is exposed so as to reduce the thickness to be removed in a subsequent CMP process, forming an landing plug contact (LPC) hard mask layer pattern on the exposed hard mask nitride film and the interlayer insulating film to expose the interlayer insulating film of a LPC region, etching the exposed interlayer insulting film using the LPC hard mask layer pattern to form a LPC hole, depositing a polysilicon layer filling up the LPC hole, and performing a CMP process using an acid slurry for metal until the hard mask nitride film is exposed to form a landing plug, so as to reduce the step difference occurring in a peripheral circuit region after a process for forming a landing plug.
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