SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME, WIRING BOARD AND METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR PACKAGE, AND ELECTRONIC DEVICE

摘要

Passivation films (3a, 3b) are so formed as to cover both sides of a semiconductor substrate (1) respectively having terminal pads (2a, 2b). Openings (3c, 3d) are formed in the passivation films (3a, 3b) in positions overlapping the terminal pads (2a, 2b). A through hole (9) penetrating the terminal pad (2a), the semiconductor substrate (1) and the terminal pad (2b) is formed inside of each opening (3c, 3d). The inner surface of the through hole (9) is provided with an insulating layer (4) which is composed of SiO₂, SiN, SiO or the like. A buffer layer (5) composed of a conductive adhesive is so formed as to cover the insulating layer (4) and the terminal pads (2a, 2b) inside the openings (3c, 3d). Further, a conductive layer (6) composed of a metal film is formed on the buffer layer (5) by electrolytic plating or electroless plating.