Structured formation of organic semiconductor material area involves preparation of basic material structure, formation of photo material area and formation of organic semiconductor material area

摘要

The method involves preparations of a basic material structure (100) with a surface area (100a), formation of a photo material area (80) with surface area (80a) such that a first area (100a1), which is to be covered, of the surface area of the basic material structure is uncovered with the organic semiconductor material area (50) from the photo material area. The second area (100a2), which is not to be covered, of the surface area of the basic material structure is covered or remain covered with organic semiconductor material area from the photo material area. The photo material area, which is formed uses a maximum layer thickness (dPh) for the photo material area, which exceeds the maximum layer thickness (dOrg) of the organic semiconductor material area. In the formation of the organic semiconductor material area and formation of the photo material area a transient area (100u) is formed from a first area of the surface area of the basic material structure to a second area of the surface area of the basic material structure with a progression of layer thickness to the maximum layer thickness for the photo material area. The organic semiconductor material (50') on the first area of the surface area of the basic material structure and the organic semiconductor material on the second area of the surface area of the basic material structure are connected with each other covered with organic semiconductor. An independent claim is also included for the method for manufacturing a monolith arrangement with an organic semiconductor materials area.