| 摘要 |
PROBLEM TO BE SOLVED: To provide an amplifying solid-state imaging device the linearity between a signal electric charge amount and a pixel output of which is furthermore improved. SOLUTION: Each pixel includes a second conductive electric charge storage region (photoelectric conversion section); an amplifier including a second conduction type electric charge detection region to which electric charges are transferred from the electric charge storage region, and providing an output of a pixel signal in response to the transferred electric charge amount; and a first conduction type inter-element separation region. In the solid-state imaging device disclosed herein, the electric charge detection region and the inter-element separation region are arranged apart from each other, and a region with an impurity concentration lower than that of the inter-element separation region is inserted between the both. In this case, after a revise bias voltage between the electric charge detection region and the surrounding regions therearound is greater to a degree of completely depleting the region with the lower impurity concentration between the both, the growth of the depletion layer is slow with respect to the increase in the reverse bias voltage. Consequently, transferring electric charges to the electric charge detection region within a range of the reverse bias voltages wherein the growth of the depletion layer is slow can solve the task above, because the voltage dependence of the electric charge detection region on its capacitance is small within the range. COPYRIGHT: (C)2006,JPO&NCIPI
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