| 摘要 |
PROBLEM TO BE SOLVED: To provide a high reliability AlGaInP semiconductor laser element which reduces heating. SOLUTION: A pair of clad layers 3, 4 with an active layer 5 inserted therebetween are laminated on a GaAs substrate 2. A ridge 8 composed of an InGaInP clad layer 9, a barrier relax layer 10 and a GaAs cap layer laminated one above another, and a pair of AlInP current blocking layers 12 with the ridge 8 inserted therebetween, are formed on the clad layers 3, 4. The barrier relax layer 10 is composed of an (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>0.5</SB>In<SB>0.5</SB>P layer near the clad layer 9 with the composition X gradedly changed at 0-0.35 to the GaAs cap layer 11 from the clad layer 9 and a super-lattice structure of paired GaAs and GaInP near the cap layer 11. COPYRIGHT: (C)2006,JPO&NCIPI
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