Dünnschicht, Verfahren zur Herstellung einer Dünnschicht und elektronische Komponente

摘要

A method for manufacturing a thin film (10) is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate (12) by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.