ANTIFUSE HAVING UNIFORM DIELECTRIC THICKNESS AND MANUFACTURING METHOD THEREOF

摘要

Disclosed are an antifuse having a uniform amorphous silicon (antifuse material) thickness and a method for fabricating such an antifuse device. The antifuse is located between overlying and underlying conductive layers, and includes: a contact and/or via hole in an insulating layer on the underlying conductive layer; a lower metal layer contacting inner surfaces of the contact and/or via hole and a top surface of the insulating layer; a filling layer contacting the lower barrier metal layer and at least partially filling the contact and/or via hole; an antifuse material layer contacting a top surface of the filling layer and a part of the lower metal layer; and an upper metal layer on the antifuse material layer.