| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of easily adjusting an etching bias and raising a process margin of a pattern, by providing a dummy pattern at a low portion of parts where a pattern density formed by a photolithographic process is relatively different, and by simultaneously providing a dummy pattern having the same capacity as that of the pattern which is to be formed on an adjacent non-active region which is not an active region. <P>SOLUTION: According to the method of manufacturing this semiconductor device, in a manufacturing process of the semiconductor device which forms a main pattern through a photo-etching process in a low density pattern area where the number of patterns formed in a predetermined region is relatively smaller as compared with other regions, there is together formed at least one dummy pattern isolated with a predetermined distance from a side face of the main pattern on a non-active region which is adjacent to an active region where the main pattern is formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
