| 摘要 |
A method of manufacturing a semiconductor device includes forming a polysilicon layer on a trench isolation layer and a tunnel oxide layer formed on a semiconductor substrate, and doping the polysilicon layer with germanium or argon. The doped polysilicon layer is patterned to form a floating gate electrode layer pattern. A charge-trapping layer is formed on the floating gate electrode layer pattern, and a control gate electrode layer pattern is formed on the charge-trapping layer.
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