METHODS FOR REMOVING BLACK SILICON AND BLACK SILICON CARBIDE FROM SURFACES OF SILICON AND SILICON CARBIDE ELECTRODES FOR PLASMA PROCESSING APPARATUSES

摘要

Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.