POWER AMPLIFIER MODULE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce the cost of a power amplifier module while improving its performance. SOLUTION: An amplifier circuit of a driver stage of a power amplifier circuit of multistage configuration is formed of LDMOSFET circuits 31A1 and 31A2 of a semiconductor chip 2. The amplifier circuit of an output stage is formed of HBT of another semiconductor chip. The semiconductor chips and passive components are mounted on a wiring board constituting an RF power module for a mobile communication equipment. A plurality of bonding pads 33 including a plurality of Vcc pads 33a and 33b are formed on the semiconductor chip 2. Each of the bonding pads 33 is connected to the terminal of wiring board using a bonding wire. The LDMOSFET circuits 31A1 and 31A2 as well as the bonding pad 33 are arranged at the outer periphery of the semiconductor chip 2. The Vcc pads 33a and 33b are electrically connected for identical potential by wiring 36 formed on the side of outer periphery of the semiconductor chip 2 where the LDMOSFET circuits 31A1 and 31A2 are not arranged. COPYRIGHT: (C)2006,JPO&NCIPI