| 发明名称 |
METHOD FOR FORMING A ONE MASK HYPERABRUPT JUNCTION VARACTOR USING A COMPENSATED CATHODE CONTACT |
| 摘要 |
A semiconductor structure comprising a hyperabrupt junction varactor with a compensated cathode contact as well as a method of fabricating the same are disclosed. The method includes a single implant mask which is used in forming the subcollector/cathode, collector/well and hyperabrupt junction.
|
| 申请公布号 |
US2006145300(A1) |
申请公布日期 |
2006.07.06 |
| 申请号 |
US20050905486 |
申请日期 |
2005.01.06 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;FURKAY STEPHEN S.;JOHNSON JEFFREY B.;RASSEL ROBERT M. |
| 分类号 |
H01L29/93;H01L21/20 |
主分类号 |
H01L29/93 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
