| 发明名称 |
Gan-based permeable base transistor and method of fabrication |
| 摘要 |
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.
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| 申请公布号 |
US2006148156(A1) |
申请公布日期 |
2006.07.06 |
| 申请号 |
US20050532456 |
申请日期 |
2005.04.22 |
| 申请人 |
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. |
发明人 |
GUNTER LIBERTY L.;CHU KANIN;EDDY CHARLES R.JR.;MOUSTAKAS THEODORE D.;BELLOTTI ENRICO |
| 分类号 |
H01L21/8238;H01L21/20;H01L21/425;H01L27/06;H01L29/20;H01L29/772 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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