| 摘要 |
A method of manufacturing a gate in a flash memory device. The method includes forming a stacking structure including a tunnel oxide layer, a floating gate, a dielectric layer, and a control gate on a semiconductor substrate. The further includes removing a remaining portion of the tunnel oxide layer exposed by the control gate by wet etching to a degree that the semiconductor substrate is exposed, and forming an oxide layer covering the exposed portion of the semiconductor substrate and both sidewalls of the floating gate and the control gate.
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