| 摘要 |
The present invention provides a method of forming an STI region in a flash memory device. The method includes: forming a pad oxide layer on a semiconductor substrate; forming a hard mask on the pad oxide layer; forming a recess groove below the hard mask by etching a portion of the pad oxide layer exposed by the hard mask and a portion of the pad oxide layer below the hard mask; forming a trench having a round edge by etching a portion of the semiconductor substrate exposed by the hard mask and a portion of the semiconductor substrate exposed in the recess groove; and forming an insulation layer filling in the trench.
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