| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a nitride semiconductor substrate capable of stably separating the substrate by performing efficiently the thermal decomposition of the nitride semiconductor by means of optical irradiation, and to provide a manufacturing method of a nitride semiconductor device. <P>SOLUTION: On a sapphire substrate 101, there are provided with a GaN buffer layer, a GaN layer 102, a multilayer 103 laminated alternately with an Al<SB>0.15</SB>Ga<SB>0.85</SB>N layer and a GaN layer, and furthermore a GaN layer 104 formed on the multilayer 103. By scanning a laser beam ranging from the side of the sapphire substrate 101 to the whole surface, the GaN layer 102 is decomposed so as to obtain a self-supporting substrate 105, and besides a GaN substrate 106 is obtained by grinding until the surface of the GaN layer 104 exposes the multilayer 103. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
