METHOD OF CREATING A Ge-RICH CHANNEL LAYER FOR HIGH-PERFORMANCE CMOS CIRCUITS

摘要

A method of forming a surface Ge-containing channel which can be used to fabricate a Ge-based field effect transistor (FET) which can be applied to semiconductor-on-insulator substrates (SOIs) is provided. The disclosed method uses Ge-containing ion beams, such as cluster ion beams, to create a strained Ge-containing rich region at or near a surface of a SOI substrate. The Ge-containing rich region can be present continuously across the entire surface of the semiconductor substrate, or it can be present as a discrete region at a predetermined surface portion of the semiconductor substrate.