发明名称 |
Magnetic random access memory |
摘要 |
<p>The unit has a magnetic portion (82) provided in a recess (64) of an insulating layer (62). A non magnetic oxide portion (92) and a ferromagnetic portion (94) are provided in a recess of an insulation layer (84) covering the layer (62). The recess of the layer (84) exposes the portion (82) and a part of the layer (62) surrounding the portion (82). A corner area (95) is formed at the level of the periphery of the portion (92). An independent claim is also included for a method for manufacturing a magnetic memory unit.</p> |
申请公布号 |
EP1677347(A1) |
申请公布日期 |
2006.07.05 |
申请号 |
EP20050113014 |
申请日期 |
2005.12.28 |
申请人 |
STMICROELECTRONICS (ROUSSET) SAS |
发明人 |
BOIVIN, PHILIPPE |
分类号 |
H01L21/8246;G11C11/14;H01L27/22 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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