发明名称 Magnetic random access memory
摘要 <p>The unit has a magnetic portion (82) provided in a recess (64) of an insulating layer (62). A non magnetic oxide portion (92) and a ferromagnetic portion (94) are provided in a recess of an insulation layer (84) covering the layer (62). The recess of the layer (84) exposes the portion (82) and a part of the layer (62) surrounding the portion (82). A corner area (95) is formed at the level of the periphery of the portion (92). An independent claim is also included for a method for manufacturing a magnetic memory unit.</p>
申请公布号 EP1677347(A1) 申请公布日期 2006.07.05
申请号 EP20050113014 申请日期 2005.12.28
申请人 STMICROELECTRONICS (ROUSSET) SAS 发明人 BOIVIN, PHILIPPE
分类号 H01L21/8246;G11C11/14;H01L27/22 主分类号 H01L21/8246
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