发明名称 |
PROCESS FOR PRODUCING HIGH RESISTIVITY SILICON WAFER, AND PROCESS FOR PRODUCING EPITAXIAL WAFER AND SOI WAFER |
摘要 |
By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment comprising high-temperature heat treatment and medium temperature heat treatment in accordance with the process for producing high-resistance silicon wafers according to the present invention, it is possible to obtain high-resistance silicon wafers capable of maintaining their high resistance even after heat treatment in the process of device manufacture while efficiently inhibiting the formation of oxygen donors and preventing changes in resistivity. Further, excellent epitaxial wafers and SOI wafers can be produced using those high-resistance silicon wafers and, therefore, they can be applied in a wide field including high-frequency communication devices and analog/digital hybrid devices, among others. |
申请公布号 |
EP1677344(A1) |
申请公布日期 |
2006.07.05 |
申请号 |
EP20040748184 |
申请日期 |
2004.08.02 |
申请人 |
SUMCO CORPORATION |
发明人 |
KURITA, KAZUNARI;SADAMITSU, SHINSUKE;TAKAO, HIROYUKI;HORAI, MASATAKA |
分类号 |
H01L21/322;C30B29/06;C30B33/02;H01L21/324;H01L21/762;H01L27/12 |
主分类号 |
H01L21/322 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|