发明名称 |
FABRICATION OF CONDUCTIVE METAL LAYER ON SEMICONDUCTOR DEVICES |
摘要 |
A method for fabrication of a light emitting device on a substrate, the light emitting device having a wafer with multiple epitaxial layers and an ohmic contact layer on the epitaxial layers remote from the substrate. The method includes the steps:(a) applying to the ohmic contact layer a seed layer of a thermally conductive metal;(b) electroplating a relatively thick layer of the conductive metal on the seed layer; and(c) removing the substrate.A corresponding light emitting device is also disclosed. The light emitting device is a GaN light emitting diode or laser diode. |
申请公布号 |
KR20060079243(A) |
申请公布日期 |
2006.07.05 |
申请号 |
KR20067007524 |
申请日期 |
2006.04.19 |
申请人 |
TINGGI TECHNOLOGIES PRIVATE LIMITED |
发明人 |
KANG XUEJUN;WU DAIKE;PERRY EDWARD ROBERT |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|