Process for cleaning a semiconductor wafer

摘要

The method involves depositing a thin silicon nitrate film (3) on a wafer (1) of a semiconductor in low pressure chemical vapor deposition (LPCVD). The thin film has an elastic constant different from an elastic constant of the wafer. The thin film is attached chemically by passing the semiconductor in a phosphoric acid bath, for removing the deposited thin film so as to eliminate contaminant particles and the thin film.