HIGH PERFORMANCE STRESS-ENHANCED MOSFETs USING Si:C AND SiGe EPITAXIAL SOURCE/DRAIN AND METHOD OF MANUFACTURE

摘要

Methods of forming a semiconductor device are provided. A method of forming a semiconductor device may include forming a stressing layer on a substrate. The method may include doping the stressing layer with dopants. The method may include forming a silicide layer on the stressing layer. Moreover, the stressing layer may include a first lattice constant different from a second lattice constant of the substrate.