METHOD FOR FORMING RECESSED GATE MOSFET HAVING UNIFORMLY DOPED VERTICAL CHANNEL,申请号KR20040117298-传众专利搜索

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发明名称	METHOD FOR FORMING RECESSED GATE MOSFET HAVING UNIFORMLY DOPED VERTICAL CHANNEL
摘要
申请公布号	KR20060077765(A)	申请公布日期	2006.07.05
申请号	KR20040117298	申请日期	2004.12.30
申请人	HYNIX SEMICONDUCTOR INC.	发明人	LEE, GA WON
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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