| 摘要 |
An antifuse device is constructed from a bipolar junction transistor (BJT). The BJT includes a collector, a base, and an emitter. In one embodiment the BJT is formed inherently within a field effect transistor (FET), including a first doped region, a second doped region, a gate, and a body region. The collector of the BJT is realized by the first doped region of the FET, the emitter of the BJT is realized by the second doped region of the FET, and the base of the BJT is realized by the body region. A high resistance path exists between the collector and the base. A first input voltage is connected to the collector and a second input voltage is connected to the base. A switch connects the emitter to a fixed potential when the switch is closed. The antifuse device is programmed by closing the switch and allowing the first input voltage and the second input voltage to create a large current from the collector to the emitter, through the base, such that the high resistance path between the collector and the base is converted to a permanent low resistance path.
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