发明名称 |
Shallow amorphizing implant for gettering of deep secondary end of range defects |
摘要 |
A pocket implant process to reduce defects. We provide a gate structure, on a semiconductor substrate doped with a first conductivity type dopant. We perform a pocket amorphizing implantation procedure to form a pocket implant region adjacent to the gate structure, and an amorphous pocket region. Next, we perform a shallow amorphizing implant to form an amorphous shallow implant region. The amorphous shallow implant region being formed at a second depth above the amorphous pocket region. The substrate above the amorphous shallow implant region preferably remains crystalline. We perform a S/D implant procedure to form Deep S/D regions. We perform an anneal procedure preferably comprised of a first soak step and a second spike step to recrystalilze the amorphous shallow implant region and the amorphous pocket region, The defects created by the pocket implant are reduced by the shallow amorphous implant.
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申请公布号 |
US7071069(B2) |
申请公布日期 |
2006.07.04 |
申请号 |
US20030743247 |
申请日期 |
2003.12.22 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD |
发明人 |
TAN CHUNG FOONG;LEE HYEOKJAE;CHOR ENG FONG;QUEK ELGIN |
分类号 |
H01L21/336;H01L21/265;H01L29/10 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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