| 摘要 |
PROBLEM TO BE SOLVED: To provide an STI (shallow trench isolation) type element isolation structure having an element isolation dielectric that does not include at least a defect such as a void or the like on a surface part thereof, and has a large aspect ratio. SOLUTION: An element isolation trench is formed in a semiconductor device via a mask pattern, the element isolation trench is embedded by a dielectric, and subsequently an unneeded dielectric is removed by chemical-mechanical polishing. In addition, the mask pattern is removed, and a semiconductor layer is epitaxially regrown from the surface of the semiconductor substrate around the element isolation dielectric that projects from the surface of the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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