| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film resonator which improves the orientation of a piezoelectric thin film, is large in electric-mechanic coupling factor, and is high in acoustic quality coefficient Q, and to provide its manufacturing method. <P>SOLUTION: The piezoelectric thin film resonator comprises a substrate 12, a pair of electrodes 14, 15; 17, and a piezoelectric thin film 16 sandwiched by the pair of electrodes 14, 15; 17. One electrode 14, 15 supported by the substrate 12 comprises a first conductive layer 14, and a polarity control layer 15 arranged between the conductive layer 14 and the thin film 16 and made up of metal whose standard single electrode potential is lower than that of the conductive layer 14. The control layer 15 has an oxide film on the side of the thin film 16. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
