| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical cavity surface emitting laser provided with two oxide-confined type stacks wherein a first independent stack as an emission active area and a second independent stack as a wire bonding stack are formed just on a laser semiconductor structure at any space therebetween, in the constitution added with an oxide layer, an insulating layer, a protective layer, and a metallic layer. SOLUTION: The vertical cavity surface emitting semiconductor laser includes a semiconductor laser layer 100, a bottom electrode layer 101, a first independent stack 102, and a second independent stack 103 which are etched and molded in the semiconductor laser layer 100, an oxide layer 104 wherein an oxide confined insulating area is formed in the first and second independent stacks 102 and 103, an insulating layer 105 which buries the peripheral recesses of the first and second independent stacks 102 and 103, a protective layer 106 which covers the surface of the insulating layer 105 and is provided with a contact hole 111 for the first independent stack 102, and a metallic layer 107 to cover the surface of the protective layer 106. The metallic layer is connected with the first independent stack 102 via the contact hole, and it extends over the second independent stack 103 to form a bonding pad 1025 as a P electrode layer of the first independent stack 102. COPYRIGHT: (C)2006,JPO&NCIPI
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