发明名称 METHOD FOR FORMING CONTACT AND ORGANIC EL DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a contact which is excellent in conduction in between a first electrode subjected to the overetching and whose connection reliability and yield are improved, a resonator structure, and an EL device provided with the resonator structure. SOLUTION: The resonator 10 is composed by laminating a plurality of different dielectric layers and sandwiched between the first electrode 236 provided with a conductive layer 237 and a cap metal layer 236a formed on the conductive layer 237, and a second electrode. The method is used for forming the contact 25 composed of a conductive material, which covers the inner wall of a contact hole 20 and allows the first electrode 236 and the second electrode to be conductive with each other, by providing the contact hole 20 extending to the cap metal layer 236a to the resonator 10 with etching. The conductive layer 237 is made as the first electrode 236 by laminating the cap metal layer 236a, which is low in contact resistance with the conductive material, high in adhesion, and has a thickness of≥10% of the thickness of the resonator 10, to the conductive layer 237. The resonator 10 is formed on the first electrode 236. The contact hole 20 is formed to the resonator 10. The contact 25 is formed to the inner wall face of the contact hole 20. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006173227(A) 申请公布日期 2006.06.29
申请号 JP20040361003 申请日期 2004.12.14
申请人 SEIKO EPSON CORP 发明人 SERA HIROSHI
分类号 H01L21/768;H01L21/3065 主分类号 H01L21/768
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