WAFER GUIDE, METAL ORGANIC VAPOR PHASE GROWING DEVICE AND METHOD FOR DEPOSITING NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a wafer guide for MOCVD device that reduces influence from a III group nitride deposit. SOLUTION: A wafer supporting instrument 15 includes one or more first sections 15a, and a second section 15b surrounding the first sections 15a. Each first section 15a includes a surface for supporting a wafer 19 on which a nitride semiconductor is deposited. In MOCVDs 11 and 13, a wafer guide 17 is provided on the second section 15b of the wafer supporting instrument 15. The wafer guide 17 is furnished with a protector 17a for covering the second section 15b, and one or more openings 17b for receiving the wafer 19 on the first section 15a. The protector 17a has a side surface 17c defining the opening 17b and guiding the wafer 19. The wafer guide 17 receives the wafer 19 in each opening 17b. The wafer 19 is loaded onto the support surface of the first section 15a of each wafer supporting instrument 15 exposed in that opening 17b. COPYRIGHT: (C)2006,JPO&NCIPI