| 摘要 |
PROBLEM TO BE SOLVED: To improve the operation characteristics of both of an n-channel transistor and a p-channel transistor by simultaneously applying different stresses to their channel portions respectively without increasing the device area. SOLUTION: There are a formation region for the n-channel transistor Qn and a formation region for the p-channel transistor Qp which are partitioned by a device isolation region IS and arranged, and the stress in the formation region for the n-channel transistor Qn caused by contact plugs CP therein and the stress in the formation region for the p-channel transistor Qp caused by contact plugs CP therein are different from each other. In this configuration, the both driving currents in the n-channel transistor Qn and the p-channel transistor Qp can be increased without changing the sizes of the active regions A and the device isolation region IS. COPYRIGHT: (C)2006,JPO&NCIPI |
