BIPOLAR TRANSISTOR, AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To prevent a penetration when forming a contact-hole onto an exogenous base in conventional HBT manufacturing, thereby improving a contact-hole formation yield. SOLUTION: This is a bipolar transistor having an epitaxial growth base layer, in which the penetration of etching through the silicon carbide layer is prevented by making the exogenous base layer into a laminated structure including a chemically extremely stable silicon carbide layer, even if there is an incomplete portion in silicide when forming a contact-hole through dry etching, thereby improving the contact-hole formation yield. COPYRIGHT: (C)2006,JPO&NCIPI