| 摘要 |
A high-voltage transistor having a low on-resistance and fabricating method thereof are provided. The high-voltage transistor includes a substrate; a shallow-trench isolation layer provided to an upper part of the substrate to a prescribed depth to define an active area; an extended drain region enclosing the shallow-trench isolation layer; a source region provided to an upper part of the substrate to be spaced apart from the extended drain region by a channel area; a drain region provided beneath the shallow-trench isolation layer within the extended drain region; a gate insulating layer pattern provided on the channel area; and a gate conductive layer pattern provided on the gate insulating layer pattern.
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