| 摘要 |
<p>[PROBLEMS] To provide a phase-change film for semiconductor non- volatile memories and a sputtering target for forming such a phase-change film. [MEANS FOR SOLVING PROBLEMS] Disclosed is a phase-change film for semiconductor non-volatile memories which has a chemical composition consisting of 10-25% of Ge, 10-25% of Sb, 1-10% of Ga, not more than 10% of B, Al, C, Si or a lanthanoid element, and the balance of Te and unavoidable impurities. Also disclosed is a sputtering target for forming such a phase-change film.</p> |
