| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in a C/N characteristic and a pushing characteristic by reducing feedback capacitance (Cre). SOLUTION: An n-type epitaxial growth layer 2 is formed on an n<SP>+</SP>-type silicon substrate 1. An embedded oxide film (element isolation) 3 is formed by permitting it to penetrate the n-type epitaxial growth layer 2 from the surface of the same into the n<SP>+</SP>-type silicon substrate 1. The embedded oxide film (element isolation) 3 is formed to be positioned at the bottom of a base lead high concentration layer (p<SP>+</SP>-type) 5 formed later. Further, a base formation layer 4 is formed on the n-type epitaxial growth layer 2 by epitaxial growth for example, and the base lead high concentration layer (p<SP>+</SP>-type) 5 is formed like a stripe so as for the base formation layer to be engaged into the base formation layer 4 from the upper portion of the embedded oxide film (element isolation) 3 for deriving a base electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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