| 摘要 |
<p>For one or more disclosed embodiments, a plurality of rows of memory cells in a burst access memory bank are activated, and a column of memory cells in the memory bank is selected to select memory cells common to activated rows and the selected column. At least one of the selected memory cells common to activated rows and the selected column is selectively accessed. The selecting and the selectively accessing are repeated to access memory cells common to activated rows and a plurality of selected columns.</p> |
