| 摘要 |
A method for fabricating a MOS transistor is suitable for modifying the configuration of a gate electrode. The method includes coating a first oxide layer on a semiconductor substrate and removing a predetermined width of the first oxide layer; forming an LDD region in the substrate; forming a gate spacer on the substrate; forming a channel in the LDD region, forming a gate oxide layer; forming a polysilicon gate electrode; and forming source/drain diffusion regions. Accordingly, a line width of the gate electrode can be reduced without employing lithography of high precision, and an area reserved for salicide can be maximally secured on the gate and source/drain regions.
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