Method of forming electrical connections in a semiconductor structure

摘要

A method of forming a semiconductor structure comprises providing a substrate comprising a layer of a material formed on a first surface of the substrate. At least one recess is formed in the layer of material. The formation of the at least one recess comprises performing a dry etching process. A contamination layer formed in the dry etching process is removed from a second surface of the substrate. Thus, contaminations of tools used in later stages of the manufacturing process resulting from flakes splitting off the contamination layer may be avoided.