| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an ultrathin SOI substrate which has an even thickness necessary for manufacturing a nano semiconductor device and has an excellent interface characteristic with high quality. SOLUTION: The method of manufacturing the SOI substrate comprises: (a) a step of forming an embedded oxide film layer at a predetermined depth of a first layer and then forming an oxide film on the first wafer, (b) a step of forming a hydrogen embedded layer in the first wafer at a depth deeper than the embedded oxide film layer, (c) a step of bonding a second wafer onto the oxide film, (d) a step of removing the first wafer under the hydrogen embedded layer so as to expose the first wafer between the embedded oxide film layer and the hydrogen embedded layer, (e) a step of sequentially removing the first wafer having been exposed in step (d) and the embedded oxide film layer so as to expose the first wafer between the embedded oxide film layer and the oxide film, and (f) a step of removing a predetermined thickness of the first wafer having been exposed in step (e). COPYRIGHT: (C)2006,JPO&NCIPI
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