发明名称 CMOS image sensor and method for manufacturing the same
摘要 Disclosed are a CMOS image sensor capable of improving the focusing capability of light and a method for manufacturing the same. The CMOS image sensor includes a plurality of first micro-lenses formed in the upper part of the planarization layer, each of the first micro-lenses arranged over a corresponding photodiode, and a plurality of second micro-lenses formed on the planarization layer, each of the plurality of second micro-lenses wrapping a corresponding first micro-lens respectively.
申请公布号 US2006138498(A1) 申请公布日期 2006.06.29
申请号 US20050315627 申请日期 2005.12.23
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 KIM SHANG W.
分类号 H01L31/062;H01L31/0232 主分类号 H01L31/062
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