| 摘要 |
A method for fabricating a semiconductor memory device is provided. The method includes: forming an inter-layer insulation layer with a storage node contact hole on a substrate; forming storage node contact spacers on sidewalls of the inter-layer insulation layer in the storage node contact hole; forming a storage node contact plug in the storage node contact hole; recessing the inter-layer insulation layer in a predetermined depth; forming an etch stop insulation layer and an insulation layer over the resulting structure obtained from the recessing of the inter-layer insulation layer; sequentially dry etching the insulation layer and the etch stop insulation layer to form an opening, exposing a portion of the storage node contact spacers and the storage node contact plug; forming a bottom electrode in the opening; and sequentially forming a dielectric layer and an upper electrode on the bottom electrode.
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