发明名称 Method for making mask in process of fabricating semiconductor device
摘要 A method for making a mask in a process of fabricating a semiconductor device is disclosed, in which one database is classified into an SRAM block and a random logic block so that OPC is separately performed for the SRAM block and the random logic block, thereby improving performance of the OPC. The method includes dividing an input database into an SRAM block and a random logic block, respectively performing optical proximity correction (OPC) for the SRAM block and the random logic block, and combining the SRAM block to the random logic block.
申请公布号 US2006141642(A1) 申请公布日期 2006.06.29
申请号 US20050316876 申请日期 2005.12.27
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 DO MUN-HOE
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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