| 摘要 |
A CMOS image sensor and a method for fabricating the same forms a trench-shaped transfer gate that serves to better transfer electrons generated by light incident on photodiodes, thus obtaining improved transfer characteristics. The CMOS image sensor includes a semiconductor substrate having at least one active region defined by a shallow trench isolation region; a light-receiving region formed in a surface of the semiconductor substrate; and a transfer gate buried in the semiconductor substrate between the light-receiving region and the at least one active region, wherein the transfer gate has a trench shape of a predetermined depth.
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