NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

摘要

The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/ GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.