发明名称 |
Manufacturing method of semiconductor device |
摘要 |
A method of manufacturing a semiconductor device includes the steps of forming a sunken section in an insulating film formed on a substrate and forming a barrier metal film on the insulating film inclusive of the sunken section. The method also includes forming a copper-based film over the entire surface so as to fill up the sunken section and forming a copper-based metal interconnection. The interconnection is formed by polishing this substrate surface by the chemical mechanical polishing method, using a polishing slurry containing a silica polishing material, an oxidizing agent, an amino acid, a triazole-based compound and water. A content ratio of the amino acid to the triazole-based compound (amino acid/triazole-based compound (weight ratio)) is 5 to 8.
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申请公布号 |
US7067427(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20030619001 |
申请日期 |
2003.07.15 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
TSUCHIYA YASUAKI;INOUE TOMOKO |
分类号 |
H01L21/302;H01L21/3205;H01L21/304;H01L21/321;H01L23/52 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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