| 摘要 |
PROBLEM TO BE SOLVED: To provide a photo detecting element having high light efficiency and high frequency characteristics for a short wavelength light ray of 405 nm, and to provide its manufacturing method. SOLUTION: This element comprises a substrate supporting a layer formed at the upper part, an epitaxial layer positioned on the substrate, at least one highly-doped first type finger shallowly formed in the epitaxial layer, at least one highly-doped second type finger shallowly formed in the epitaxial layer, a first type well formed in the epitaxial layer and positioned at the outside of the highly-doped first and second type fingers, a highly-doped first type electrode shallowly formed in the first type well, and a circuit formed at the upper part of the highly-doped first type electrode. The doping conditions of the first and second types are antithetical to each other. COPYRIGHT: (C)2006,JPO&NCIPI
|
