| 摘要 |
PROBLEM TO BE SOLVED: To provide an alkali etching liquid that suppresses the Ni-contamination of a silicon wafer caused by alkali etching at low cost, prevents the Cu-contamination of the silicon wafer caused by alkali etching, and further reduces Ni-contamination, and an etching method using the etching liquid. SOLUTION: The feature of this alkali etching liquid for the silicon wafer is that a diethylenetriamine pentaacetic acid (0.1 g/L to 0.5 g/L) is added to the water solution of a potassium hydroxide, and the concentration of Fe in the water solution of the potassium hydroxide is 50 ppb or less. In addition, the feature of this etching method is that the silicon wafer with a specific resistance of 1Ωcm or less can be etched using the above etching liquid. COPYRIGHT: (C)2006,JPO&NCIPI
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